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MCH6660
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
20
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
0.4
1.9
105
1.3
136
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
See speci ? ed Test Circuit.
VDS=10V, VGS=4.5V, ID=2A
IS=2A, VGS=0V
147
212
128
28
21
5.1
11
14.5
12
1.8
0.3
0.55
0.85
205
318
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
--20
--1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
VDS=--10V, ID=--1mA
VDS=--10V, ID=--750mA
ID=--750mA, VGS=--4.5V
--0.4
1.9
205
--1.4
266
V
S
m Ω
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--300mA, VGS=--2.5V
ID=--100mA, VGS=--1.8V
VDS=--10V, f=1MHz
See speci ? ed Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--1.5A
IS=--1.5A, VGS=0V
295
430
120
26
20
5.3
9.7
16
14
1.7
0.28
0.47
--0.89
413
645
--1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1993-2/9
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